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STP40N65M2 データシート(PDF) 1 Page - STMicroelectronics |
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STP40N65M2 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  February 2015 DocID027478 Rev 1 1/14 This is information on a product in full production. www.st.com STI40N65M2, STP40N65M2 N- channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2 Power MOSFET in I²PAK and TO-220 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STI40N65M2 650 V 0.099 Ω 32 A STP40N65M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STI40N65M2 40N65M2 I²PAK Tube STP40N65M2 TO-220 1 2 3 1 2 3 TO-220 I²PAK TAB TAB AM15572v1_tab D(2, TAB) G(1) S(3) |
同様の部品番号 - STP40N65M2 |
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同様の説明 - STP40N65M2 |
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