G30M65DF2 datasheet(1/16 Pages) STMICROELECTRONICS

部品番号	G30M65DF2

部品情報	Low thermal resistance

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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April 2017

DocID027355 Rev 3

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This is information on a product in full production.

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STGP30M65DF2

Trench gate field-stop IGBT, M series 650 V, 30 A

low-loss in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of minimum short-circuit withstand time



VCE(sat) = 1.55 V (typ.) @ IC = 30 A



Tight parameters distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represent an optimum compromise

in performance to maximize the efficiency of

inverter systems where low-loss and short-circuit

capability are essential. Furthermore, a positive

VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packaging

STGP30M65DF2

G30M65DF2

TO-220

Tube

1

2

3

TO-220

TAB

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