STPSC8H065C datasheet(4/8 Pages) STMICROELECTRONICS

部品番号	STPSC8H065C

部品情報	High forward surge capability

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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4 / 8 page

Characteristics

STPSC8H065C

4/8

DocID024808 Rev 2

Figure 5. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 6. Relative variation of thermal

impedance junction to case versus pulse

duration

Cj (pF)

100

150

200

250

0.1

1.0

10.0

100.0

1000.0

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

VR(V)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

Figure 7. Non-repetitive peak surge forward

current versus pulse duration (sinusoidal

waveform, per diode)

Figure 8. Total capacitive charges versus

reverse voltage applied (typical values, per

diode)

IFSM(A)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

Ta=25 °C

Ta=125 °C

tp(s)

Qcj (nC)

100

150

200

250

300

350

400

VR (V)

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