データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

Preview PDF HTML

TS110-7 データシート(PDF) 2 Page - STMicroelectronics

部品番号 TS110-7
部品情報  High surge voltage 1.25 A SCR for circuit breaker
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TS110-7 データシート(HTML) 2 Page - STMicroelectronics

  TS110-7 Datasheet HTML 1Page - STMicroelectronics TS110-7 Datasheet HTML 2Page - STMicroelectronics TS110-7 Datasheet HTML 3Page - STMicroelectronics TS110-7 Datasheet HTML 4Page - STMicroelectronics TS110-7 Datasheet HTML 5Page - STMicroelectronics TS110-7 Datasheet HTML 6Page - STMicroelectronics TS110-7 Datasheet HTML 7Page - STMicroelectronics TS110-7 Datasheet HTML 8Page - STMicroelectronics TS110-7 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
Characteristics
TS110-7
2/10
DocID022271 Rev 4
1
Characteristics
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
On-state rms current (180° conduction angle)
TO-92
Tl = 58 °C
1.25
A
SMBflat-3L Ttab = 110 °C
IT(AV)
Average on-state current
(180° conduction angle)
TO-92
Tl = 58 °C
0.8
A
SMBflat-3L Ttab = 110 °C
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
27
A
tp = 10 ms
25
1st step: one surge every 5 seconds, 25 surges
2nd step: one surge every 5 seconds, 25 surges
tp = 10 ms
Tj initial = 25 °C
25 times 12 A,
25 times 16 A
I²tI²t Value for fusing
tp = 10 ms
3.1
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
100
A/µs
Critical rate of rise of on-state current
Gate open, VD = VBO, tr ≤ 100 ns
Tj = 25 °C
100
VDRM,
VRRM
Repetitive peak off-state voltage, gate open
Tj = 125 °C
700
V
VDSM
Non-repetitive direct surge peak off-state
voltage, RGK = 220 Ω
tp = 50 µs
Tj = 25 °C
1250
V
VRSM
Non-repetitive reverse surge peak off-state
voltage, RGK = 220 Ω
tp = 50 µs
Tj = 25 °C
850
V
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
1.2
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
0.2
W
Tstg
Storage junction temperature range
- 40 to + 150
°C
Tj
Operating junction temperature range
- 40 to + 125
Table 2. Electrical characteristics
Symbol
Test conditions
Value
Unit
IGT
VD = 12 V, RL = 140Ω
Tj = 25 °C
Min.
1
µA
Max.
100
VGT
Max.
0.8
V
VGD
VD = VDRM, RL = 33 kΩ, RGK = 220 Ω
Tj = 125 °C
Min.
0.1
V
VRG
IRG = 2 mA
Tj = 25 °C
Min.
7.5
V
IH
IT = 50 mA, RGK = 220 Ω
Tj = 25 °C
Max.
2
mA
IL
IG = 5 mA, RGK = 220 Ω
Tj = 25 °C
Max.
2
mA
dV/dt
VD = 67% VDRM, RGK = 220 Ω
Tj = 125 °C
Min.
15
V/µs



Html Pages

1 2 3 4 5 6 7 8 9 10


データシート ダウンロード

Go To PDF Page


リンク URL



ALLDATASHEETはお客様のビジネスに役立ちますか？  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   データシートへのリンク    |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com