ACE6802B datasheet(1/6 Pages) ACE

部品番号	ACE6802B

部品情報	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE6802B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

ACE6802B uses advanced trench technology and design to provide excellent RDS(ON) with low gate

charge. It can be used in a wide variety of applications.

Features



VDS=80V, ID=110A



RDS(ON)1@VGS=10V, TYP 4.5mΩ

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

80

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

110

A

TA=100℃

70

Drain Current (Pulsed)*B

IDM

300

A

Power Dissipation

TA=25℃

PD

80

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

DFN5*6-EP

Ordering information

ACE6802B XX + H

PN: DFN5*6-EP

Pb - free

Halogen - free

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