Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120AG Product summary

Features
■ AEC-Q101 qualified
■ Very tight variation of on-resistance vs. temperature
■ Very high operating temperature capability (TJ = 200 °C)
■ Very fast and robust intrinsic body diode
■ Low capacitance

Applications
■ Motor drives
■ EV chargers
■ High voltage DC-DC converters
■ Switch mode power supplies