Description
The 4612 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.

General Features
● N-Channel
VDS = 60V,ID =4.5A
RDS(ON) < 55mΩ @ VGS=10V
● P-Channel
VDS = -30V,ID = -4.9A
RDS(ON) < 70mΩ @ VGS=-10V
RDS(ON) < 90mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package