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4612 データシート(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

部品番号 4612
部品情報  N and P-Channel Enhancement Mode Power MOSFET
PDF  8 Pages
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メーカー  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
ホームページ  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4612 データシート(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4612 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4612 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4612 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4612 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4612 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co 4612 Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co 4612 Datasheet HTML 7Page - Shenzhen Tuofeng Semiconductor Technology Co 4612 Datasheet HTML 8Page - Shenzhen Tuofeng Semiconductor Technology Co  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
100
nA
VGS(th)
1
2.1
3
V
ID(ON)
20
A
46
55
50
60
m
Ω
gFS
11
S
VSD
0.74
1
V
IS
3A
Ciss
450
540
pF
Coss
60
pF
Crss
25
pF
Rg
1.65
2
Ω
Qg(10V)
8.5
10.5
nC
Qg(4.5V)
4.3
5.5
nC
Qgs
1.6
nC
Qgd
2.2
nC
tD(on)
4.7
7
ns
tr
2.3
4.5
ns
tD(off)
15.7
24
ns
tf
1.9
4
ns
trr
27.5
35
ns
Qrr
32
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
IF=4.5A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=4.5A, dI/dt=100A/µs
Input Capacitance
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
µA
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
On state drain current
VGS=10V, VDS=5V
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
Ω
VGS=4.5V, ID=3A
VDS=5V, ID=4.5A
IS=1A,VGS=0V
VGS=10V, ID=4.5A
Diode Forward Voltage
VGS=10V, VDS=30V, RL=6.7Ω,
RGEN=3Ω
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
VGS=10V, VDS=30V, ID=4.5A
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
Page
v1.0
2
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4612
www.sztuofeng.com



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