4612 datasheet(1/8 Pages) TUOFENG

部品番号	4612

部品情報	N and P-Channel Enhancement Mode Power MOSFET

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メーカー	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

ホームページ	http://www.sztuofeng.com/?lang=en

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1 / 8 page

Symbol

Max p-channel

Units

VDS

V

VGS

V

IDM

TJ, TSTG

°C

Symbol

Device

Typ

Max

Units

n-ch

48

62.5 °C/W

n-ch

74

110

°C/W

RθJL

n-ch

35

60

°C/W

p-ch

48

62.5 °C/W

p-ch

74

110

°C/W

RθJL

p-ch

35

40

°C/W

Maximum Junction-to-Lead

C

Steady-State

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

Maximum Junction-to-Ambient

A

Steady-State

-20

Power Dissipation

TA=25°C

PD

Steady-State

Junction and Storage Temperature Range

A

Continuous Drain

Current

A

TA=25°C

ID

Pulsed Drain Current

B

W

4.5

20

2

-3.2

2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Max n-channel

60

-60

±20

Drain-Source Voltage

±20

Gate-Source Voltage

Thermal Characteristics: n-channel and p-channel

-55 to 150

Maximum Junction-to-Lead

C

Steady-State

Parameter

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

Maximum Junction-to-Ambient

A

N and P-Channel Enhancement Mode Power MOSFET

Description

The 4612 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

● N-Channel

VDS = 60V,ID =4.5A

RDS(ON) < 55mΩ @ VGS=10V

● P-Channel

VDS = -30V,ID = -4.9A

RDS(ON) < 70mΩ @ VGS=-10V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

RDS(ON) < 60mΩ @ VGS=4.5V

RDS(ON) < 90mΩ @ VGS=-4.5V

N-channel

P-channel

Equivalent Cir cuit

MARKING

4612

o

TFCYWP

Y :year code W :week code

SOP-8

Page

v1.0

1

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4612

www.sztuofeng.com

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