Features
● Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
● 2ND generation CoolMOS power MOSFET
   - High blocking capability
   - Low on resistance
   - Avalanche rated for unclamped inductive
      switching (UIS)
● Low thermal resistance due to reduced chip thickness
● Low drain to tab capacitance(<30pF)

Applications
● Switched Mode Power Supplies (SMPS)
● Uninterruptible Power Supplies (UPS)
● Power Factor Correction (PFC)
● Welding
● Inductive Heating

Advantages
● Easy assembly: no screws or isolation foils required
● Space savings
● High power density