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IXKC40N60C データシート(PDF) 1 Page - IXYS Corporation |
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IXKC40N60C データシート(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2001 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 600 V V GS Continuous ±20 V I D25 T C = 25 °C; Note 1 28 A I D90 T C = 90 °C, Note 1 19 A I D(RMS) Package lead current limit 45 A E AS I o = 10A, T C = 25°C 690 mJ E AR I o = 20A 1 mJ P D T C = 25 °C 250 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +125 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C V ISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~ F C Mounting force 11 ... 65 / 2.4 ...11 N/lb Weight 3g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. R DS(on) V GS = 10 V, I D = ID90, Note 3 80 96 m Ω V GS = 10 V, I D = ID90, Note 3 TJ = 125°C 230 m Ω V GS(th) V DS = V GS, ID = 2 mA 3.5 5.5 V I DSS V DS = V DSS T J = 25°C2 µA V GS = 0 V T J = 125°C20 µA I GSS V GS = ±20 V DC, VDS = 0 ±200 nA G = Gate, D = Drain, S = Source * Patent pending V DSS = 600 V I D25 = 28 A R DS(on) = 96 m Ω Ω Ω Ω Ω 98847 (6/01) ADVANCE TECHNICAL INFORMATION ISOPLUS 220TM Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l 2 ND generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) l Low thermal resistance due to reduced chip thickness l Low drain to tab capacitance(<30pF) Applications l Switched Mode Power Supplies (SMPS) l Uninterruptible Power Supplies (UPS) l Power Factor Correction (PFC) l Welding l Inductive Heating Advantages l Easy assembly: no screws or isolation foils required l Space savings l High power density G D S Isolated back surface* CoolMOS Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low R DS(on), High Voltage,, MOSFET IXKC 40N60C COOLMOS is a trademark of Infineon Technolgy |
同様の部品番号 - IXKC40N60C |
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同様の説明 - IXKC40N60C |
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