GENERAL DESCRIPTION
The CB45000 standard cell series uses a high performance, low voltage, 5 level metal, HCMOS6 0.35 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity.

FEATURES
■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates.
■ 3.3 V optimized transistor with 5 V I/O interface capability
■ 2 - input NAND delay of 160 ps (typ) with fanout = 2.
■ Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS. Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels
■ High drive I/O; capability of sinking up to 24 mA with slew rate control, current spike suppression and impedance matching.
■ Generators to support Single Port RAM, Dual Port RAM, and ROM with BIST options.
■ DRAM integration in ASIC methodology
■ Extensive embedded function library including ST DSP and micro cores, third party micros and Synopsys synthetic libraries.
■ Fully independent power and ground configurations for inputs, core and outputs.
■ I/O ring capability up to 1000 pads.
■ Latchup trigger current > +/- 500 mA. ESD protection > +/- 4000 volts typical value
■ Oscillators for wide frequency spectrum.
■ Broad range of 500+ SSI cells
■ Design For Test features including IEEE 1149.1 JTAG Boundary Scan architecture.
■ Cadence, Mentor and Synopsys based design systems with interfaces from multiple workstations.
■ Broad ceramic and plastic package range.