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GD25LE256DFIS データシート(PDF) 28 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LE256DFIS データシート(HTML) 28 Page - GigaDevice Semiconductor (Beijing) Inc. |
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28 / 83 page ![]() 1.8V Uniform Sector Dual and Quad Serial Flash GD25LE256D 28 7.10. Dual Output Fast Read (3BH) The Dual Output Fast Read command is followed by 3-byte address (A23-A0) or a 4-byte address (A31-A0) and a dummy byte, and each bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence is shown in followed Figure11. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The default read mode is 3-byte address mode, and the lower 128Mbit can be read with a single Dual Output Fast Read (3BH) command. By entering 4-byte address mode, or to set EN4B (S11) bit to 1, the higher 128Mbit can be read with a single Dual Output Fast Read (3BH) command. Figure11. Dual Output Fast Read Sequence Diagram Command 0 1 2 3 4 5 6 7 3BH CS# SCLK SI SO High-Z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24-bit address MSB 34 35 36 37 33 5 3 1 7 5 3 1 38 39 Data Out1 32 42 43 44 45 41 46 47 40 7 Data Out2 CS# SCLK SI SO MSB Dummy Clocks 4 2 0 6 4 2 0 6 6 7 Note: The device default is in 24-bit address mode. For 4-byte mode, the address length becomes 32-bit. |
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