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GD25LE256DFIS データシート(PDF) 82 Page - GigaDevice Semiconductor (Beijing) Inc.

部品番号 GD25LE256DFIS
部品情報  1.8V Uniform Sector Dual and Quad Serial Flash
PDF  83 Pages
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メーカー  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
ホームページ  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25LE256DFIS データシート(HTML) 82 Page - GigaDevice Semiconductor (Beijing) Inc.

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1.8V Uniform Sector
Dual and Quad Serial Flash
GD25LE256D
82
11. REVISION HISTORY
Version No
Description
Page
Date
1.0
Initial Release
All
Mar.10,2017
1.1
Modify Advanced security Features
Modify SFDP
P4
P62-P66
Apr. 5,2017
1.2
Add CONNECTION DIAGRAM:16-LEAD SOP
Modify ORDERING INFORMATION
Modify Valid Part Numbers
Add Package SOP16 300mil
P5
P71
P72
P75
Apr.11,2017
1.3
Modify Icc2 from 0.2/2 to 0.4/10
P69
Jul. 25, 2017
1.4
Modify VWI max value from 1.4V to 1.5V
Input Pause Voltage
from “0.2VCC to 0.8VCC” to “0.1VCC to
0.8VCC
”
Input Timing Reference Voltage
from “0.3VCC to 0.7VCC” to
“0.2VCC to 0.7VCC”
Modify ILI max value from ±2uA to ±4uA
Modify ILO max value from ±2uA to ±4uA
Modify Icc2 max value from 10uA to 16uA
Delete tRST_P and tRST_R
Add tRST, max = 30us
Update the description of all packages
P66
P67
P67
P68
P68
P68
P69
P69
P73-75
Dec.28, 2017
1.5
Modify the description of 03H command
Modify CIN max value from 6pF to 12pF
Modify COUT max. value from 8pF to 16pF
P25
P68
P68
Mar.20, 2018
1.6
Modify tVSL min. value from 5ms to 2.5ms
Modify the typ. value of Icc3: @120MHz from 15mA to 12mA,
@80MHz from 13mA to 10mA
Add tRS, of which the min value is 100us
Modify tPP typ. value from 0.7ms to 0.5ms
Modify tSE from 90-500ms to 70ms-400ms
Modify tBE1 typ. value from 0.3s to 0.16s
Modify tBE2 typ. value from 0.5s to 0.3s
Modify tCE from 200-400s to 100-240s
P67
P69
P70
P70
P70
P70
P70
P71
Jun.21, 2018
1.7
Add 4BH command
Modify the sequence diagram of 42H command
Modify tBE2 @-40C~85C max value from 1.5s to 1.2s
Add AC/DC parameters @-40C~105C
Add AC/DC parameters @-40C~125C
P53
P55
P73
P71, 74
P72, 75
Aug.30, 2018



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