STM32G031F6 datasheet(51/117 Pages) STMICROELECTRONICS

51 / 117 page

DS12992 Rev 2

51/117

STM32G031x4/x6/x8

Electrical characteristics

Table 26. Typical current consumption in Run and Low-power run modes,

depending on code executed

Symbol

Parameter

Conditions

Typ

Unit

Typ

Unit

General

Code

Fetch

from(1)

25 °C

IDD(Run)

Supply

current in

Run mode

Range 1;

fHCLK = fPLLRCLK =

64 MHz;

(2)

Reduced code(3)

Flash

memory

5.4

uA/MHz

Coremark

5.2

Dhrystone 2.1

5.3

Fibonacci

4.3

While(1) loop

4.0

Reduced code(3)

SRAM

4.4

Coremark

5.6

Dhrystone 2.1

5.6

Fibonacci

4.3

While(1) loop

4.0

Range 2;

fHCLK = fHSI16 =

16 MHz,

PLL disabled,

(2)

Reduced code(3)

Flash

memory

1.6

100

Coremark

1.5

Dhrystone 2.1

1.5

Fibonacci

1.1

While(1) loop

1.0

Reduced code(3)

SRAM

1.3

Coremark

1.4

Dhrystone 2.1

1.4

Fibonacci

1.0

While(1) loop

1.0

IDD(LPRun)

Supply

current in

Low-power

run mode

fHCLK = fHSI16/8 =

2 MHz;

PLL disabled,

(2)

Reduced code(3)

Flash

memory

345

173

uA/MHz

Coremark

400

200

Dhrystone 2.1

400

200

Fibonacci

365

183

While(1) loop

415

208

Reduced code(3)

SRAM

225

113

Coremark

515

258

Dhrystone 2.1

515

258

Fibonacci

295

148

While(1) loop

290

145

1. Prefetch and cache enabled when fetching from Flash. Code compiled with high optimization for space in SRAM.

2. VDD = 3.3 V, all peripherals disabled, cache enabled, prefetch disabled for execution in Flash and enabled in SRAM

3. Reduced code used for characterization results provided in Table 25.

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