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AS4LC2M8S1 データシート(PDF) 13 Page - Alliance Semiconductor Corporation

部品番号 AS4LC2M8S1
部品情報  3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
PDF  28 Pages
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メーカー  ALSC [Alliance Semiconductor Corporation]
ホームページ  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC2M8S1 データシート(HTML) 13 Page - Alliance Semiconductor Corporation

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AS4LC2M8S1
AS4LC1M16S1
7/5/00
ALLIANCE SEMICONDUCTOR
13
Read—DQM operation*
* For this example, the burst length = 4, and the CAS latency = 2.
† A8 and A9 = “Don’t care.”
ƒ DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
Write—DQM operation*
* For this example, the burst length = 4.
† A8 and A9 = “Don’t care.”
ƒ DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
CLK
CKE
COMMAND
DQMƒ
A0–A9
A10
T0
T1
T4
T2
T6
T7
T8
tCH
tCL
tCK
*†ƒ
tCKS
tCKH
NOP
tCMH
tCMS
READ
NOP
NOP
NOP
NOP
T3
T5
BA
DQ
tCL
tCMS
tCMH
ACTIVE
tAH
tAS
ROW
tAH
tAS
ROW
tAH
tAS
BANK
Column m
(A0-A7)3
ENABLE AUTOPRECHARGE
DISABLE AUTOPRECHARGE
BANK
tRCD
CAS latency
tAC
*†ƒ
tLZ
tOH
tHZ
tLZ
DOUT m+2
tAC
*†ƒ
DOUT m+3
tAC
*†ƒ
tOH
tDQZ
tOH
tHZ
DOUT m
ROW
NOP
NOP
CLK
CKE
COMMAND
DQMƒ
A0–A9
A10
T0
T1
T4
T2
T6
tCH
tCK
*†ƒ
tCKS tCKH
NOP
NOP
tCMH
tCMS
WRITE
NOP
NOP
NOP
NOP
T3
T5
BA
DQ
tCL
tCMS
tCMH
ACTIVE
tAH
tAS
ROW
tAH
tAS
ROW
tAH
tAS
BANK
Column m
(A0-A7)†
ENABLE AUTOPRECHARGE
DISABLE AUTOPRECHARGE
BANK
tRCD
T7
DIN m
DIN m+2
DIN m+3
tDS
tDH
tDS
tDH
tDS
tDH



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