2.5 GHz to 8.5 GHz, I/Q Mixer

Data Sheet

HMC8193

Rev. B

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FEATURES

Passive I/Q mixer

RF and LO range: 2.5 GHz to 8.5 GHz

Wide IF range: dc to 4 GHz

Single-ended RF, LO, and IF

Conversion loss (downconverter): 9 dB (typical)

Image rejection (downconverter): 25 dBc (typical)

SSB noise figure (downconverter): 11.5 dB (typical)

Input IP3 (downconverter): 20 dBm (typical)

Input P1dB compression point (downconverter): 13 dBm

(typical)

Input IP2 (downconverter): 58 dBm (typical)

RF to IF isolation (downconverter): 22 dB (typical)

LO to RF isolation (downconverter): 48 dB (typical)

LO to IF isolation (downconverter): 38 dB (typical)

Amplitude balance (downconverter): ±0.5 dB (typical)

Phase balance (downconverter): ±5° (typical)

RF return loss: 13 dB (typical)

LO return loss 13 dB (typical)

IF return loss: 17 dB (typical)

Exposed pad, 4 mm × 4 mm, 24-terminal, ceramic

LCC package

APPLICATIONS

Test and measurement instrumentation

Military, aerospace, and radar

Direct conversion receivers

FUNCTIONAL BLOCK DIAGRAM

13

1

3

4

2

NIC

NIC

GND

RF

5

6

GND

NIC

NIC

14

GND

GND

PACKAGE

BASE

15

LO

16

GND

17

NIC

18

NIC

HMC8193

Figure 1.

GENERAL DESCRIPTION

The HMC8193 is a passive, in phase/quadrature (I/Q), monolithic

microwave integrated circuit (MMIC) mixer that can be used

either as an image rejection mixer for receiver operations, or as

a single-sideband upconverter for transmitter operations from

2.5 GHz to 8.5 GHz. The inherent I/Q architecture of the

HMC8193 offers excellent image rejection and thereby eliminates

the need for expensive filtering of unwanted sidebands. The

mixer also provides excellent local oscillator (LO) to radio

frequency (RF) and LO to intermediate frequency (IF) isolation

and reduces the effect of LO leakage to ensure signal integrity.

Being the HMC8913 is a passive mixer, it does not require any

dc power sources. The device offers a lower noise figure than an

active mixer, ensuring superior dynamic range for high

performance and precision applications.

The HMC8193 is fabricated on a gallium arsenide (GaAs),

metal semiconductor field effect transistor (MESFET) process

and uses Analog Devices, Inc., mixer cells and a 90° hybrid. It is

available in a compact, 4 mm × 4 mm, 24-lead LCC package

and operates over the −40°C to +85°C temperature range. An

evaluation board for this device is also available.