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27291SL データシート(PDF) 2 Page - NXP Semiconductors

部品番号 27291SL
部品情報  Airfast RF Power LDMOS Transistor
PDF  20 Pages
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo NXP - NXP Semiconductors

27291SL データシート(HTML) 2 Page - NXP Semiconductors

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NXP Semiconductors
Data Sheet: Technical Data
2/20
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to 225
C
Total Device Dissipation @ TC =25C
Derate above 25C
PD
222
1.11
W
W/C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80.5C, 14 W Avg., W–CDMA, 28 Vdc, IDQ = 450 mA,
880 MHz
RJC
0.90
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
Class 1C, passes 1500 V
Charge Device Model (per JS--002--2014)
Class C3, passes 1000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS =32 Vdc, VGS =0 Vdc)
IDSS
1
Adc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
1
Adc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 100 Adc)
VGS(th)
1.0
1.8
3.0
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGS(Q)
2.3
2.6
2.9
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID = 100 mAdc)
VDS(on)
0.02
Vdc
Forward Transconductance
(VDS =10 Vdc, ID =7.5 Adc)
gfs
6.2
S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)



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