NXP Semiconductors

Data Sheet: Technical Data

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A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021

Typical Characteristics — 136 MHz Reference Circuit

Figure 14. Output Power versus Gate--Source Voltage

0

Detail A

0.5

0.75

1.25

5

0

0

120

Detail A

12

3

3.5

100

80

60

40

20

0

11.5

10

15

20

0.5

1.5

2.5

0.25

f = 136 MHz, CW

0

31

75

30

29

28

27

26

25

0.05

0.25

65

45

25

60

40

20

0

0.1

0.15

0.2

80

100

120

55

35

Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power

30.5

29.5

28.5

27.5

26.5

25.5

0

31

80

30

29

28

27

26

0.15

0.25

60

40

20

75

50

25

0

0.05

0.1

0.2

100

125

0

85_C

25_C

–40_C

85_C

25_C

–40_C

85_C

25_C

Figure 16. Power Gain, Output Power and Drain Efficiency versus Input Power over Temperature

30.5

29.5

28.5

27.5

26.5