NXP Semiconductors

Data Sheet: Technical Data

8/20

A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021

Typical Characteristics — 880 MHz Production Test Fixture (cont.)

0

--10

--50

10

--20

--30

--40

1

15

27

–15

75

60

45

30

15

25

23

10

100

0

21

19

17

ACPR

880 MHz

850 MHz

910 MHz

Single--Carrier W--CDMA

3.84 MHz Channel Bandwidth

850 MHz

880 MHz

910 MHz

Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF

850 MHz

910 MHz

880 MHz

Figure 9. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power

21.5

0

19

24

25

75

65

55

45

35

23

22

60

120

21

20

f = 880 MHz, CW

Figure 10. Power Gain and Drain Efficiency versus CW Output Power over Temperature

20

40

80

100

85_C

25_C

25_C

–40_C

85_C

23.5

22.5

20.5

19.5

70

60

50

40

30

12

24

f, FREQUENCY (MHz)

20

18

16

22

14

700

750

800

850

900

950

1000

1050

1100

Gain

--25

5

0

–5

--10

--15

--20

IRL

Figure 11. Broadband Frequency Response