STM32WB10CC datasheet(60/110 Pages) STMICROELECTRONICS

60 / 110 page

Electrical characteristics

STM32WB10CC

60/110

DS13259 Rev 2

6.3.4

Operating conditions at power-up / power-down

The parameters given in Table 25 are derived from tests performed under the ambient

temperature condition summarized in Table 20.

6.3.5

Embedded reset and power control block characteristics

The parameters given in Table 26 are derived from tests performed under the ambient

temperature conditions summarized in Table 20: General operating conditions.

Table 25. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

tVDDRF

VDDRF rise time rate

∞

VDDRF fall time rate

∞

Table 26. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after BOR0 is detected VDD rising

250

400

μs

VBOR0(2)

Brown-out reset threshold 0

Rising edge

1.62

1.66

1.70

Falling edge

1.60

1.64

1.69

VBOR1

Brown-out reset threshold 1

Rising edge

2.06

2.10

2.14

Falling edge

1.96

2.00

2.04

VBOR2

Brown-out reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brown-out reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brown-out reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage detector threshold 0

Rising edge

2.10

2.15

2.19

Falling edge

2.00

2.05

2.10

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

VPVD2

PVD threshold 2

Rising edge

2.41

2.46

2.51

Falling edge

2.31

2.36

2.41

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