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STM32WB10CC データシート(PDF) 76 Page - STMicroelectronics

部品番号 STM32WB10CC
部品情報  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5.2 radio solution
PDF  110 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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STM32WB10CC データシート(HTML) 76 Page - STMicroelectronics

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Electrical characteristics
STM32WB10CC
76/110
DS13259 Rev 2
6.3.10
Internal clock source characteristics
The parameters given in Table 49 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 20: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
VLSEH
OSC32_IN input pin
high level voltage
-
0.7 VDDx
-VDDx
V
VLSEL
OSC32_IN input pin
low level voltage
-VSS
-
0.3 VDDx
tw(LSEH)
tw(LSEL)
OSC32_IN
high or low time
-
250
-
-
ns
ftolLSE
Frequency tolerance
Includes initial accuracy,
stability over temperature,
aging and frequency pulling
-500
-
+500
ppm
1. Specified by design, not tested in production.
Table 48. Low-speed external user clock characteristics, bypass mode(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 49. HSI16 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 frequency
VDD = 3.0 V, TA= 30 °C 15.88
-
16.08
MHz
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 64
0.2
0.3
0.4
%
Trimming code is a
multiple of 64
-4
-6
-8
DuCy(HSI16)(2) Duty cycle
-
45
-
55
∆Temp(HSI16)
HSI16 oscillator frequency drift
over temperature
TA = 0 to 85 °C
-1
-
1
TA = –10 to 85 °C
-2
-
1.5
∆VDD(HSI16)
HSI16 oscillator frequency drift
over VDD
VDD = 2.0 V to 3.6 V
-0.1
-
0.05
tsu(HSI16)(2)
HSI16 oscillator start-up time
-
-
0.8
1.2
μs
tstab(HSI16)(2) HSI16 oscillator stabilization time
-
-
3
5
IDD(HSI16)(2)
HSI16 oscillator power consumption
-
-
155
190
μA
1. Evaluated by characterization, not tested in production.
2. Specified by design, not tested in production.



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