STM32L031C6 datasheet(57/126 Pages) STMICROELECTRONICS

57 / 126 page

DS10668 Rev 6

57/126

STM32L031x4/6

Electrical characteristics

Table 24. Current consumption in Run mode, code with data processing running

from Flash memory

Symbol

Parameter

Conditions

fHCLK

Typ

Max(1)

Unit

IDD

(Run

from

Flash)

Supply

current in

Run mode,

code

executed

from Flash

fHSE = fHCLK up to

16 MHz included,

fHSE = fHCLK/2 above

16 MHz (PLL on)(2)

Range 3, VCORE = 1.2 V

VOS[1:0] = 11

1 MHz

140

200

µA

2 MHz

245

310

4MHz

460

540

Range 2, VCORE = 1.5 V,

VOS[1:0] = 10,

4 MHz

0.56

0.63

8 MHz

1.1

1.2

16 MHz

2.1

2.3

Range 1, VCORE = 1.8 V,

VOS[1:0] = 01

8 MHz

1.25

1.4

16 MHz

2.5

2.7

32 MHz

5.6

HSI clock

Range 2, VCORE = 1.5 V,

VOS[1:0] = 10,

16 MHz

2.1

2.4

Range 1, VCORE = 1.8 V,

VOS[1:0] = 01

32 MHz

5.1

5.7

MSI clock

Range 3, VCORE = 1.2 V,

VOS[1:0] = 11

65 kHz

34.5

110

µA

524 kHz

150

4.2 MHz

505

570

1. Guaranteed by characterization results at 125 °C, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

Table 25. Current consumption in Run mode vs code type,

code with data processing running from Flash memory

Symbol

Parameter

Conditions

fHCLK

Typ

Unit

IDD

(Run

from

Flash)

Supply

current in

Run mode,

code

executed

from Flash

memory

fHSE = fHCLK up to

16 MHz included,

fHSE = fHCLK/2 above

16 MHz (PLL ON)(1)

Range 3,

VCORE=1.2 V,

VOS[1:0] = 11

Dhrystone

4 MHz

460

µA

CoreMark

455

Fibonacci

330

while(1)

305

while(1), prefetch

OFF

320

Range 1,

VOS[1:0] = 01,

VCORE = 1.8 V

Dhrystone

32 MHz

CoreMark

5.15

Fibonacci

while(1)

4.35

while(1), prefetch

OFF

3.85

1. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

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