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HV9961 データシート(PDF) 4 Page - Microchip Technology |
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HV9961 データシート(HTML) 4 Page - Microchip Technology |
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4 / 20 page ![]() HV9961 DS20005588B-page 4 2017-2022 Microchip Technology Inc. and its subsidiaries LD Input Shutdown Threshold Voltage VLD(OFF) — 150 — mV VLD falling LD Input Enable Threshold Voltage VLD(EN) — 200 — mV VLD rising Current Sense Blanking Interval TBLANK 150 — 340 ns (Note 2) Minimum On-time TON(MIN) — — 1000 ns VCS = VCST + 30 mV Maximum Steady-state Duty Cycle DMAX 75 — — % Reduction in output LED current may occur beyond this duty cycle SHORT-CIRCUIT PROTECTION Hiccup Threshold Voltage VCSH 410 440 470 mV Current Limit Delay CS-to-Gate TDELAY — — 185 ns VCS = VCSH + 30 mV Short-circuit Hiccup Time THICCUP 350 400 550 μs Minimum On-time (Short-circuit) TON(MIN),SC — — 430 ns VCS = VDD TOFF TIMER Off-time TOFF 32 40 48 μs RT = 1 MΩ 810 12 RT = 226 kΩ GATE DRIVER Gate Sourcing Current ISOURCE 0.165 — — A VGATE = 0V, VDD = 7.5V Gate Sinking Current ISINK 0.165 — — A VGATE = VDD, VDD = 7.5V Gate Output Rise Time tr —30 50 ns CGATE = 500 pF, VDD = 7.5V Gate Output Fall Time tf —30 50 ns CGATE = 500 pF, VDD = 7.5V ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: TA = 25°C, VIN = 12V, VLD = VDD, and VPWMD = VDD unless otherwise specified. Parameter Sym. Min. Typ. Max. Unit Conditions Note 1: Also limited by package power dissipation limit, whichever is lower 2: Denotes specifications which apply over the full operating ambient temperature range of –40°C < TA < +125°C 3: Specification is obtained by characterization and is not 100% tested. TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGES Operating Ambient Temperature TA –40 — +125 °C Junction Temperature TJ –40 — +150 °C Storage Temperature TS –65 — +150 °C PACKAGE THERMAL RESISTANCE 8-lead SOIC JA —101 — °C/W 16-lead SOIC JA —83— °C/W |
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