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MBT3906L データシート(PDF) 3 Page - AiT Semiconductor Inc.

部品番号 MBT3906L
部品情報  SWITCHING TRANSISTOR PNP TRANSISTOR
PDF  8 Pages
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メーカー  AITSEMI [AiT Semiconductor Inc.]
ホームページ  https://ait-ic.com/
Logo AITSEMI - AiT Semiconductor Inc.

MBT3906L データシート(HTML) 3 Page - AiT Semiconductor Inc.

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AiT Semiconductor Inc.
www.ait-ic.com
MBT3906L
SWITCHING TRANSISTOR
PNP TRANSISTOR
REV1.2
- MAY 2011 RELEASED, APR 2019 UPDATED -
- 3 -
ELECTRICAL CHARACTERISTICS
NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in.
NOTE2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NOTE3: Pulse Width <300μ s; Duty Cycle <2.0%.
Parameter
Symbol
Conditions
Min
Max
Unit
OFFCHARACTERISTICS
Collector-Emitter
Breakdown VoltageNOTE3
V(BR)CEO
IC = -1.0mAdc, IB = 0
-40
-
Vdc
Collector-Base Breakdown
Voltage
V(BR)CBO
IC = -10μAdc, IE = 0
-40
-
Vdc
Emitter-Base Breakdown
Voltage
V(BR)EBO
IE = -10μAdc, IC = 0
-5.0
-
Vdc
Base Cutoff Current
IBL
VCE= -30Vdc, VEB = -3.0Vdc
-
-50
nAdc
Collector Cutoff Current
ICEX
VCE = -30Vdc, V EB = -3.0Vdc
-
-50
nAdc
ON CHARACTERISTICSNOTE2
DC Current GainNOTE1
hFE
IC = -0.1mAdc, VCE = -1.0Vdc
60
-
-
IC = -1.0mAdc, VCE = -1.0Vdc
80
-
-
IC = -10mAdc, VCE = -1.0Vdc
100
300
-
IC = -50mAdc, VCE = -1.0Vdc
60
-
-
IC = -100mAdc, VCE =-1.0 Vdc
30
-
-
Collector–Emitter
Saturation Voltage
VCE(sat)
IC = -10mAdc, IB = -1.0mAdcNOTE3
-
-0.25
Vdc
IC = -50mAdc, IB = -5.0mAdc
-
-0.4
Base-Emitter Saturation
Voltage NOTE3
VBE(sat)
IC = -10mAdc, IB = -1.0mAdc
-0.65
-0.85
Vdc
IC = -50mAdc, IB = -5.0mAdc
-
-0.95
SMALL–SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth
Product
fT
IC = -10mAdc, V CE = -20Vdc,
f = 100MHz
250
-
MHz
Output Capacitance
Cobo
VCB = -5.0Vdc, I E = 0, f = 1.0MHz
-
4.5
pF
Input Capacitance
Cibo
VBE = -0.5Vdc, IC = 0, f = 1.0MHz
-
10
pF
Input Impedancen
hie
VCE = -10Vdc, I C = -1.0mAdc,
f = 1.0kHz
2.0
12
kΩ
Voltage Feedback Ratio
hre
VCE = -10Vdc, I C = -1.0mAdc,
f = 1.0kHz
0.1
10
x10 –4
Small–Signal Current Gain
hfe
VCE = -10Vdc, IC = -1.0mAdc,
f = 1.0kHz
100
400
-
Output Admittance
hoe
VCE = -10Vdc, IC = -1.0mAdc,
f = 1.0kHz
3.0
60
μmhos
Noise Figure
NF
VCE = -5.0Vdc, IC = -100μAdc,
RS = 1.0kΩ, f = 1.0kHz
-
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
td
VCC = -3.0Vdc,VBE = 0.5Vdc
IC = -10mAdc, IB1 = -1.0mAdc
-
35
ns
Rise Time
tr
-
35
Storage Time
ts
VCC = -3.0Vdc, IC = -10mAdc,
I B1 = I B2 = -1.0mAdc
-
225
ns
Fall Time
tf
-
75



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