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MBT3906L データシート(PDF) 2 Page - AiT Semiconductor Inc. |
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MBT3906L データシート(HTML) 2 Page - AiT Semiconductor Inc. |
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2 / 8 page ![]() AiT Semiconductor Inc. www.ait-ic.com MBT3906L SWITCHING TRANSISTOR PNP TRANSISTOR REV1.2 - MAY 2011 RELEASED, APR 2019 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in. NOTE2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. VCEO, Collector - Emitter Voltage -40Vdc VCBO, Collector - Base Voltage -40Vdc VEBO, Emitter - Base Voltage -5.0Vdc IC, Collector Current - Continuous -200mAdc Parameter Symbol Max Unit Total Device Dissipation FR-5 BoardNOTE1 TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Total Device Dissipation Alumina SubstrateNOTE2 TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ , Tstg -55 to +150 °C |
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