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RHRPM4424LK01V データシート(PDF) 7 Page - STMicroelectronics

部品番号 RHRPM4424LK01V
部品情報  Rad-hard 4.5 A dual low-side MOSFET driver
PDF  31 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RHRPM4424LK01V データシート(HTML) 7 Page - STMicroelectronics

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5
Electrical characteristics
VCC = 4.65 V to 18 V and TJ = -55 to 125 °C, unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICC
VCC quiescent current
VCC= 18 V Inputs not
switching
OUTH_1 ≡ OUTL_1
OUTH_2 ≡ OUTL_2
TJ = 25 °C
1.6
2.1
mA
VUVLO
Undervoltage lockout threshold for
turn-on
VCC rising
4.3
4.65
V
Undervoltage lockout hysteresis
300
mV
Input stage
PWM_x
Input at high level – VIH
Rising threshold
2.0
V
Input at low level – VIL
Falling threshold
0.8
V
tD_PWM_x
Minimum delay time between VCC
supply connection and PWM_x
inputs driving (1)
50
ms
IPWM
PWM_xinput pin current
PWM_x = SGND
-1
+1
μA
PWM_x = 3.3 V
VCC = 10 V and 18 V
0
+2
PWM_x = VCC- 0.5 V
VCC = 18 V
0
+5
dVPWM/dt PWM_xinput pin transient (1)
100
mV/s
Output stage
Rhi
Source resistance
VCC = 10 V
Inputs at high level
IOUT = 100 mA
TJ = 25 °C
0.7
1.1
Ω
VCC = 10 V
Inputs at high level
IOUT = 100 mA
1.4
Ω
Rlo
Sink resistance
VCC = 10 V
Inputs at low level
IOUT = 100 mA
TJ = 25 °C
1.0
1.4
Ω
VCC = 10 V
Inputs at low level
IOUT = 100 mA
1.9
Ω
RHRPM4424
Electrical characteristics
DS11485 - Rev 7
page 7/31



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