TCD1711DG

Rev.1.1 2019-03-27

3

© 2019

Toshiba Electronic Devices & Storage Corporation

Optical/Electrical Characteristics

Ta

 25°C, VOD  10 V, V  VSH  VRS  VCP  5 V (pulse), f  1.0 MHz,

tINT (integration time)

 10 ms, light source  daylight fluorescent lamp

Characteristics

Symbol

Min

Typ.

Max

Unit

Note

Sensitivity

R

12

15

18

V/lx

s



Photo response non uniformity

PRNU



4

10

%

(Note 2)

PRNU (3)



6

12

mV

(Note 8)

Saturation output voltage

VSAT

1.5

1.8



V

(Note 3)

Saturation exposure

SE

0.08

0.12



lx

s

(Note 4)

Dark signal voltage

VDRK



1

3

mV

(Note 5)

Dark signal non uniformity

DSNU



4

10

mV

(Note 5)

DC power dissipation

PD



250

375

mW



Total transfer efficiency

TTE

92

98



%



Output impedance

ZO



0.2

1.0

k





Dynamic range

DR



1800





(Note 6)



DC output signal voltage

VOS1

3.0

4.5

6.0

V

(Note 7)

VOS2

3.0

4.5

6.0

DC differential error voltage

│VOS1  VOS2│





300

mV



Random noise

ND





1.0



mV

(Note 9)

Note 2: PRNU is defined on a single chip by the expressions below when the photosensitive surface is applied with

the light of uniform illumination and uniform color temperature, where measured approximately 750 mV of

signal output.

PRNU



X

 100 (%)

X

Where X is average of total signal output and X is the maximum deviation from X under uniform

illumination. (OS1)

In the case of 3725 elements (OS2), the condition is the same as above too.

Note 3: VSAT is defined as the minimum saturation output voltage of all effective pixels.

Note 4: Definition of SE:

SE



VSAT

R

Note 5: VDRK is defined as average dark signal voltage of all effective pixels.

DSNU is defined by the difference between average value (VDRK) and the maximum value of the dark

voltage.

Note 6: Definition of DR:

DR



VSAT

VDRK

VDRK is proportional to tINT (integration time). So shorter integration time makes wider dynamic range.

OS

VDRK

DSNU