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ISO808 データシート(PDF) 9 Page - STMicroelectronics

部品番号 ISO808
部品情報  Galvanic isolated octal high-side power solid state relay for high inductive loads
PDF  38 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ISO808 データシート(HTML) 9 Page - STMicroelectronics

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Table 6. Diagnostic pin and output protection function
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VFAULT FAULT pin open drain voltage output low
IFAULT = 5 mA
0.4
V
ILFAULT FAULT output leakage current
VFAULT = 5 V
1
μA
IPEAK
Maximum DC output current before limitation
VCC = 24 V RLOAD = 0 Ω
2.3
A
ILIM
Short circuit current limitation
ISO808
0.7
1.9
A
ISO808-1
1
Hyst
ILIM tracking limits
0.3
A
TJSD
Junction shutdown temperature
150
175
200
°C
TJR
Junction reset temperature
150
°C
TJHYST Junction thermal hysteresis
15
°C
TCSD
Case shutdown temperature
125
130
135
°C
TCR
Case reset temperature
115
°C
TCHYST Case thermal hysteresis
15
°C
VDEMAG Output voltage at turn-off
IOUT = 0.5 A; ILOAD ≥ 1 mH
VCC-50 VCC-54 VCC-58
V
Table 7. Power switching characteristics (VCC = 24 V; RLOAD = 48 Ω; -40 °C < TJ < 125 °C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
dV/dt(ON)
Turn-on voltage slope
(see Figure 4 )
0.7
V/μs
tr
Rise time
19
32
μs
dV/dt(OFF)
Turn-off voltage slope
1.5
V/μs
tf
Fall time
7
23
μs
td(ON)
Turn-ON delay time
(see Figure 5, Figure 6)
15
24
μs
td(OFF)
Turn-OFF delay time
43
80
μs
tw(OUT_EN)
OUT_EN pulse width
(see Figure 8, Figure 9)
150
ns
tp(OUT_EN)
OUT_EN propagation delay
40
80
μs
ISO808, ISO808-1
Electrical characteristics
DS14169 - Rev 1
page 9/38



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