Dual N-Channel Enhancement Mode Field Effect Transistor

CEM9935A

FEATURES

20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V.

RDS(ON) = 42mΩ @VGS = 4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

20

2.0

24

6.0

±12

V

W

A

A

V

5 - 233

SO-8

1

D1

D1

D2

D2

S1

G1

S2

G2

8

7

6

5

1

2

3

4

RDS(ON) = 75mΩ @VGS = 2.5V.

Lead free product is acquired.

2003.July

http://www.cet-mos.com

5

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

62.5

RθJA