BAS16

High-speed switching diode

1 October 2022

Product data sheet

1. General description

High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

• High switching speed: trr ≤ 4 ns

• Low capacitance

• Low leakage current

• Reverse voltage: VR ≤ 100 V

• Repetitive peak reverse voltage: VRRM ≤ 100 V

3. Applications

• High-speed switching

• General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VR

reverse voltage

-

-

100

V

IR

reverse current

VR = 80 V; Tamb = 25 °C

-

-

0.5

µA

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

4

ns

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

A1

anode (diode 1)

2

n.c.

not connected

3

K

cathode

1

2

3

SOT23

006aaa764

K

A

n.c.