Nexperia

BAS21

High-voltage switching diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 100 mA; Tj = 25 °C

-

-

1

V

VF

forward voltage

IF = 200 mA; Tj = 25 °C

-

-

1.25

V

VR = 200 V; Tj = 25 °C

-

-

100

nA

IR

reverse current

VR = 200 V; Tj = 150 °C

-

-

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

5

pF

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA; Tamb = 25 °C

-

-

50

ns

600

IF

(mA)

0

200

400

mbg384

0

2

1

VF (V)

(1)

(3)

(2)

(1) Tj = 150 °C; typical values

(2) Tj = 25 °C; typical values

(3) Tj = 25 °C; maximum values

Fig. 1. Forward current as a function of forward

voltage

mbg381

200

0

100

Tj (°C)

10

IR

(µA)

1

10- 2

102

10- 1

(1)

(2)

(1) VR = VRmax; maximum values

(2) VR = VRmax; typical values

Fig. 2. Reverse current as a function of junction

temperature

mbg703

10

1

102

IFSM

(A)

10- 1

tp (µs)

1

104

103

10

102

Based on square wave currents.

Tj(init) = 25 °C

Fig. 3. Non-repetitive peak forward current as a

function of pulse duration; maximum values

mbg447

0

4

8

6

2

VR (V)

1.0

0.8

0.2

0.6

0.4

Cd

(pF)

f = 1 MHz

Tj = 25 °C.

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values.

BAS21

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Nexperia B.V. 2022. All rights reserved

Product data sheet

1 July 2022

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