Nexperia

74LVC2G08

Dual 2-input AND gate

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 8.

-40 °C to +85 °C

-40 °C to +125 °C

Symbol Parameter

Conditions

Min

Typ[1]

Max

Min

Max

Unit

nA, nB to nY; see Fig. 7

[2]

VCC = 1.65 V to 1.95 V

1.0

3.2

9.0

1.0

11.3

ns

VCC = 2.3 V to 2.7 V

0.5

2.2

5.1

0.5

6.4

ns

VCC = 2.7 V

1.0

2.5

5.3

1.0

6.7

ns

VCC = 3.0 V to 3.6 V

0.5

2.1

4.7

0.5

5.9

ns

tpd

propagation delay

VCC = 4.5 V to 5.5 V

0.5

1.7

3.8

0.5

4.8

ns

CPD

power dissipation

capacitance

per gate; VI = GND to VCC [3]

-

14.4

-

-

-

pF

[1] Typical values are measured at nominal VCC and at Tamb = 25 °C.

[2] tpd is the same as tPLH and tPHL

[3] CPD is used to determine the dynamic power dissipation (PD in μW).

PD = CPD × VCC 2 × fi × N + ∑(CL × VCC 2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

∑(CL × VCC 2 × fo) = sum of outputs.

74LVC2G08

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2023. All rights reserved

Product data sheet

Rev. 18 — 23 January 2023

7 / 20