1999 Jun 11

2

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT18F; BUT18AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT186 package with

electrically isolated mounting base.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

mb

mounting base; electrically isolated from all pins

andbook, halfpage

MBK109

1 23

Fig.1 Simplified outline (SOT186) and symbol.

3

2

1

MBB008

QUICK REFERENCE DATA

THERMAL CHARACTERISTICS

Notes

1. Mounted without heatsink compound and 30

±5 N force on centre of package.

2. Mounted with heatsink compound and 30

±5 N force on centre of package.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

collector-emitter peak voltage

BUT18F

850

V

BUT18AF

1000

V

collector-emitter voltage

open base

BUT18F

400

V

BUT18AF

450

V

collector-emitter saturation voltage

see Fig.7

1.5

V

collector saturation current

4

A

collector current (DC)

see Fig.4

6

A

collector current (peak value)

see Fig.4

12

A

total power dissipation

33

W

fall time

resistive load; see Figs 10 and 11

0.8

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to external heatsink note 1

6.15

K/W

note 2

3.65

K/W