1999 Jun 11

3

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT18F; BUT18AF

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Without heatsink compound.

2. With heatsink compound.

ISOLATION CHARACTERISTICS

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter peak voltage

BUT18F

−

850

V

BUT18AF

−

1000

V

collector-emitter voltage

open base

BUT18F

−

400

V

BUT18AF

−

450

V

collector saturation current

−

4A

collector current (DC)

see Fig.4

−

6A

collector current (peak value)

see Fig.4

−

12

A

base current (DC)

−

3A

base current (peak value)

−

6A

total power dissipation

−

20

W

−

33

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

isolation voltage from all terminals to external heatsink (peak value)

−

1500

V

isolation capacitance from collector to external heatsink

12

−

pF

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-emitter sustaining voltage

L = 25 mH; see Figs 3 and 6

BUT18F

400

−−

V

BUT18AF

450

−−

V

collector-emitter saturation voltage

1.5

V

base-emitter saturation voltage

1.3

V

collector-emitter cut-off current

note 1

−−

1mA

−−

2mA

emitter-base cut-off current

−−

10

mA