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PCF8531 データシート(PDF) 21 Page - NXP Semiconductors |
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PCF8531 データシート(HTML) 21 Page - NXP Semiconductors |
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21 / 44 page ![]() 2000 Feb 11 21 Philips Semiconductors Product specification 34 × 128 pixel matrix driver PCF8531 handbook, full pagewidth MGS475 S 011110 S A 0 0A acknowledge from PCF8531 acknowledge from PCF8531 acknowledge from PCF8531 acknowledge from PCF8531 acknowledge from PCF8531 1 control byte A data byte data byte n ≥ 0 bytes 1 byte slave address MSB . . . . . . . . . . . LSB 2n ≥ 0 bytes A Co Co 0A A P RS R/W control byte RS Fig.15 Master transmits to slave receiver; write mode. 10 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); note 1. Note 1. Parameters are valid over the operating temperature range unless otherwise specified. All voltages referenced to VSS unless otherwise noted. 11 HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is recommended to take normal precautions appropriate to handling MOS devices (see “Handling MOS Devices”). SYMBOL PARAMETER MIN. MAX. UNIT VDD1 logic supply voltage −0.5 +5.5 V VDD2, VDD3 multiplier supply voltage −0.5 +4.5 V IDD supply current −50 +50 mA VLCD LCD supply voltage −0.5 +9.0 V ILCD LCD supply current −50 +50 mA ISS negative supply current −50 +50 mA VI/VO input/output voltage (any input/output) −0.5 VDD + 0.5 V II DC input current −10 +10 mA IO DC output current −10 +10 mA Ptot total power dissipation per package − 300 mW P/out power dissipation per output − 30 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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