PD55003STR-E datasheet(1/29 Pages) STMICROELECTRONICS

部品番号	PD55003STR-E

部品情報	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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August 2011

Doc ID 12273 Rev 4

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29

PD55003-E

RF power transistor from the LdmoST plastic family

of N-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V

Description

The PD55003-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies of up to 1 GHz. The PD55003 boasts

excellent gain, linearity and reliability thanks to

ST’s latest LDMOS technology mounted in the

first true SMD plastic RF power package, the

PowerSO-10RF.

The PD55003’s superior linearity performance

makes it an ideal solution for car mobile radios.

The PowerSO-10RF plastic package is designed

for high reliability, and is the first JEDEC-

approved, high power SMD package from ST. It

has been optimized for RF requirements and

offers excellent RF performance and ease of

assembly.

Mounting recommendations are provided in

application note AN1294, available on

www.st.com.

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order code

Package

Packing

PD55003-E

PowerSO-10RF (formed lead)

Tube

PD55003S-E

PowerSO-10RF (straight lead)

Tube

PD55003TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD55003STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com

同様の部品番号 - PD55003STR-E

メーカー	部品番号	データシート	部品情報
STMicroelectronics	PD55003STR-E	468Kb / 29P	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 19-May-2010

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同様の説明 - PD55003STR-E

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