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LP5900SD-2.7/NOPB.A データシート(PDF) 17 Page - Texas Instruments

部品番号 LP5900SD-2.7/NOPB.A
部品情報  LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor
PDF  29 Pages
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メーカー  TI2 [Texas Instruments]
ホームページ  https://www.ti.com
Logo TI2 - Texas Instruments

LP5900SD-2.7/NOPB.A データシート(HTML) 17 Page - Texas Instruments

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LP5900
www.ti.com
SNVS358R – JULY 2005 – REVISED JUNE 2016
Product Folder Links: LP5900
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
AN-1112 DSBGA Wafer Level Chip Scale Package (SNVA009)
AN-1112 AN-1112 Leadless Leadframe Package (LLP) (SNOA401)
IC Package Thermal Metrics application report (SPRA953)
11.2 Trademarks
All trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.



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