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L9352B データシート(PDF) 9 Page - STMicroelectronics |
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L9352B データシート(HTML) 9 Page - STMicroelectronics |
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9 / 27 page ![]() L9352B Electrical specifications 9/27 3.2 Thermal data 3.3 Operating range VS, VCC,VDD Supply pins vs. GND and PGND ±1 kV ESD Output pins (Qx, Dx) vs. Common GND (PGND1-4 + GND) ±4 kV Table 3. Absolute maximum ratings (continued) Symbol Parameter Test conditions Min Typ Max Unit Table 4. Thermal data Symbol Parameter Test conditions Min Typ Max Unit Tj Junction temperature Tj -40 150 °C Tjc Junction temperature during clamping (life time) t = 30min t = 15min 175 190 °C Tstg Storage temperature Tstg -55 150 °C Tth Over temperature shutdown threshold (1) 175 200 °C Thy Over temperature shutdown hysteresis (1) 10 °C Rth j-case Thermal resistance junction to case 2 K/W 1. This parameter will not be tested but assured by design. Table 5. Operating range Symbol Parameter Test conditions Min. Typ. Max. Unit VS Supply voltage 4.8 18 V VCC, VDD Supply voltage 4.5 5.5 V dVS/dt Supply voltage transient time -1 1 V/s VQ Output voltage static -0.3 40 V VQ Output voltage induced by inductive switching Voltage will be limited by internal Z-diode clamping 60 V VST Output voltage status -0.3 6 V IST Output current status -1 1 mA Tj Junction temperature -40 150 °C Tjc Junction temperature during clamping = 30min = 15min 175 190 °C |
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