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IS25LE512M-RLLA3:P-TY データシート(PDF) 80 Page - Integrated Silicon Solution, Inc

部品番号 IS25LE512M-RLLA3:P-TY
部品情報  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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メーカー  ISSI [Integrated Silicon Solution, Inc]
ホームページ  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RLLA3:P-TY データシート(HTML) 80 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
80
Rev. A6
06/16/2025
Figure 8.17 Fast Read Quad I/O AX Read Sequence (EBh [EXTADD=0], 3-byte address)
20
CE #
SCK
4
0
4
0
3-byte Address
16
12
8
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
IO0
IO1
21
5
1
5
1
17
13
9
22
6
2
6
2
18
14
10
23
7
3
7
3
19
15
11
Mode Bits
IO2
IO3
5
1
4
0
5
1
4
0
6
2
6
2
7
3
7
3
...
...
...
...
Data Out 1
Data Out 2
...
tV
6 Dummy Cycles
Notes:
1.
If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the
mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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