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IS25LE512M-RLLA3:P-TY データシート(PDF) 88 Page - Integrated Silicon Solution, Inc

部品番号 IS25LE512M-RLLA3:P-TY
部品情報  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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メーカー  ISSI [Integrated Silicon Solution, Inc]
ホームページ  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RLLA3:P-TY データシート(HTML) 88 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
88
Rev. A6
06/16/2025
Figure 8.26 Quad Input Page Program operation (32h/38h [EXTADD=1] or 34h/3Eh, 4-byte address)
31
4-byte Address
30
39
40
41
42
43
Instruction = 32h/38h/34h/3Eh
CE #
SCK
4
0
4
0
High Impedance
...
0
0
1
2
3
4
5
6
7
8
9
Mode 3
Mode 0
IO0
IO1
5
1
5
1
6
2
6
2
7
3
7
3
Data In 2
IO2
IO3
...
Data In 1
...
...
...
...
...
8.12 ERASE OPERATION
The
Erase command sets all bits in the addressed sector or block to “1”s.
The memory array of the device is organized into uniform 4 Kbyte sectors or 32/64/256 Kbyte uniform blocks (a
block consists of eight/sixteen adjacent sectors respectively).
Before a byte is
reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”).
In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase (BER),
and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without affecting the
data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole
memory array of a device. A sector erase, block erase, or chip erase operation can be executed prior to any
programming operation.



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