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IS25LE512M-RLLA3:P-TY データシート(PDF) 130 Page - Integrated Silicon Solution, Inc

部品番号 IS25LE512M-RLLA3:P-TY
部品情報  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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メーカー  ISSI [Integrated Silicon Solution, Inc]
ホームページ  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RLLA3:P-TY データシート(HTML) 130 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
130
Rev. A6
06/16/2025
Figure 8.86 FRDDTR Sequence (BDh [EXTADD=0], 3-byte address)
CE #
SCK
IO0
IO1
Instruction = BDh
CE #
SCK
IO0
IO1
3-byte Address
High Impedance
0
1
2
3
4
5
6
7
8
9
10
...
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Mode 3
Mode 0
...
tV
22 20 18
0
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
4 Dummy Cycles
23 21 19
1
Data Out
...
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
Data Out
Data Out
Data Out
Data Out
Data Out
16 14 12
17 15 13
10
11
7 5
6 4
3 1
2 0
Mode Bits
...
Mode Bits
...
...
Notes:
1.
If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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