VN770KP datasheet(9/33 Pages) STMICROELECTRONICS

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VN770KP-E

Electrical specifications

2.3

Electrical characteristics for dual high side switch

8 V < VCC< 36 V; -40°C < Tj < 150°C, unless otherwise specified.

RIN MIN Minimum input series impedance

150

Drain current

Internally limited

Reverse DC output current

-10.5

VESD1

Electrostatic discharge (R = 1.5 KΩ, C = 100 pF)

4000

VESD2

Electrostatic discharge on output pin only (human

body model: R = 330 Ω, C = 150 pF)

5000

Ptot

Power dissipation (TC = 25°C)

Operating junction temperature

Internally limited

°C

Case operating temperature

Internally limited

°C

Tstg

Storage temperature

-55 to 150

°C

Table 5. Low side switch (continued)

Symbol

Parameter

Value

Unit

Table 6. Power outputs (per each channel)

Symbol

Parameter

Test conditions

Min

Typ

Max Unit

VCC(1)

1. Per device.

Operating supply

voltage

5.5

VUSD(1) Undervoltage shutdown

5.5

VOV(1) Overvoltage shutdown

RON

On-state resistance

IOUT = 1 A; Tj = 25°C

160

mΩ

IOUT = 1 A; VCC > 8 V

320

mΩ

IS(1)

Supply current

Off-state; VCC = 13 V;

VIN = VOUT =0 V

μA

Off-state; VCC = 13 V;

VIN = VOUT =0 V; Tj = 25°C

μA

On-state; VCC = 13V; VIN = 5V;

IOUT = 0 V

IL(off1) Off-state output current VIN = VOUT = 0 V

μA

IL(off2) Off-state output current VIN = 0 V; VOUT = 3.5 V

-75

μA

IL(off3) Off-state output current

VIN = VOUT = 0 V; VCC = 13 V;

Tj = 125°C

μA

IL(off4) Off-state output current

VIN = VOUT = 0 V; VCC = 13 V;

Tj = 25°C

μA

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