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VN770KP データシート(PDF) 12 Page - STMicroelectronics

部品番号 VN770KP
部品情報  Quad smart power solid state relay for complete H-bridge configurations
PDF  33 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN770KP データシート(HTML) 12 Page - STMicroelectronics

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Electrical specifications
VN770KP-E
12/33
DocID022021 Rev 4
Tj = 25°C, unless otherwise specified.
Table 13. On-state
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
RDS(on)
Static drain source on
resistance
VIN = 5 V; ID = 3.5 A; Tj = 25°C
—
—
65
mΩ
VIN = 5 V; ID = 3.5 A
—
—
130
mΩ
Table 14. Dynamic
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
gfs(1)
1. Pulsed: Pulse duration = 300μs, duty cycle 1.5%
Forward trans
conductance
VDD = 13 V; ID = 3.5 A
—
9
—
S
COSS
Output capacitance
VDS = 13 V; f = 1 MHz; VIN = 0 V
—
220
—
pF
Table 15. Switching
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
Turn-on delay time
VDD = 15 V; ID = 3.5 A; Vgen = 5 V;
Rgen = RIN MIN = 150 Ω
—
100
300
ns
tr
Rise time
—
470
1500
ns
td(off)
Turn-off delay time
—
500
1500
ns
tf
Fall time
—
350
1000
ns
td(on)
Turn-on delay time
VDD = 15 V; ID = 3.5 A; Vgen = 5 V;
Rgen = 2.2 KΩ
—
0.75
2.3
μs
tr
Rise time
—
4.6
14
μs
td(off)
Turn-off delay time
—
5.4
16
μs
tf
Fall time
—
3.6
11
μs
(dI/dt)on Turn-on current slope
VDD = 15 V; ID = 3.5 A; Vgen = 5 V;
Rgen = RIN MIN = 150 Ω
—
6.5
A/μs
Qi
Total input charge
VDD = 12 V; ID = 3.5 A; VIN = 5 V;
Igen = 2.13 mA
—
18
nC
Table 16. Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
VSD(1)
1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
ISD = 3.5 A; VIN = 0 V
—
0.8
—
V
trr
Reverse recovery time
ISD = 3.5 A; dI/dt = 20 A/μs;
VDD = 30 V; L = 200 μH
—
220
—
ns
Qrr
Reverse recovery charge
—
0.28
—
μC
IRRM
Reverse recovery current
—
2.5
—
A



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