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VN770KP データシート(PDF) 10 Page - STMicroelectronics

部品番号 VN770KP
部品情報  Quad smart power solid state relay for complete H-bridge configurations
PDF  33 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN770KP データシート(HTML) 10 Page - STMicroelectronics

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Electrical specifications
VN770KP-E
10/33
DocID022021 Rev 4
Table 7. Switching (per each channel) (VCC = 13 V)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
Turn-on delay time
RL = 13 Ω from VIN rising edge to
VOUT = 1.3 V
—
30
—
μs
td(off)
Turn-off delay time
RL = 13 Ω from VIN falling edge to
VOUT = 11.7 V
—
30
—
μs
dVOUT/dt(on)
Turn-on voltage
slope
RL = 13 Ω from VOUT = 1.3 V to
VOUT = 10.4 V
—
(1)
1. See relative diagram
—V/μs
dVOUT/dt(off)
Turn-off voltage
slope
RL = 13Ω from VOUT = 11.7 V to
VOUT = 1.3 V
—
(1)
—V/μs
Table 8. Logic input (per each channel)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
VIL
Input low level
1.25
V
IIL
Low level input current
VIN = 1.25 V
1
μA
VIH
Input high level
3.25
V
IIH
High level input current
VIN = 3.25 V
10
μA
VI(hyst)
Input hysteresis voltage
0.5
V
VICL
Input clamp voltage
IIN = 1 mA
6
6.8
8
V
IIN = -1 mA
-0.7
V
Table 9. Status pin (per each channel)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
VSTAT Status low output voltage ISTAT = 1.6 mA
0.5
V
ILSTAT Status leakage current
Normal operation; VSTAT = 5 V
10
μA
CSTAT
Status pin input
capacitance
Normal operation; VSTAT = 5 V
100
pF
VSCL
Status clamp voltage
ISTAT = 1 mA
6
6.8
8
V
ISTAT = -1 mA
-0.7
V
Table 10. Protections (per each channel)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
TTSD
Shutdown temperature
150
175
200
°C
TR
Reset temperature
135
-
°C
Thyst
Thermal hysteresis
7
15
°C
tSDL
Status delay in
overload conditions
Tj > TTSD
20
μs



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