ST7LITEU09 datasheet(86/115 Pages) STMICROELECTRONICS

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13.6 MEMORY CHARACTERISTICS

TA = -40°C to 125°C, unless otherwise specified

13.6.1 RAM and Hardware Registers

13.6.2 FLASH Program Memory

13.6.3 EEPROM Data Memory

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-

isters (only in HALT mode). Guaranteed by construction, not tested in production.

2. Up to 32 bytes can be programmed at a time.

3. The data retention time increases when TA decreases.

4. Data based on reliability test results and monitored in production.

5. Data based on characterization results, not tested in production.

6. Guaranteed by Design. Not tested in production.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode 1)

HALT mode (or RESET)

1.6

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash write/erase

2.4

5.5

tprog

Programming time for 1~32 bytes 2)

TA=−40 to +125 °C

Programming time for 2 KBytes

TA=+25 °C

0.32

0.64

tRET

Data retention 4)

TA=+55 °C

years

NRW

Write erase cycles

TA=+25 °C

10k

cycles

IDD

Supply current 6)

Read / Write / Erase

modes

fCPU = 8 MHz, VDD = 5.5 V

2.6

No Read/No Write Mode

100

µA

Power down mode / HALT

0.1

µA

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for EEPROM

write/erase

Refer to operating range of VDD with

TA, section 13.3.1 on page 76

2.4

5.5

tprog

Programming time for 1~32

bytes

TA=−40 to +125 °C

tret

Data retention 4)

TA=+55 °C

years

NRW

Write erase cycles

TA=+25 °C

300k

cycles

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