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M7010R データシート(PDF) 58 Page - STMicroelectronics |
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M7010R データシート(HTML) 58 Page - STMicroelectronics |
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58 / 67 page ![]() M7010R 58/67 SRAM ADDRESSING Table 35, page 61 lists and describes the com- mands used to generate addresses on the SRAM address bus. The Index[13:0] field contains the ad- dress of a 68-bit entry that results in a hit in 68-bit configured quadrant. It is the address of the 68-bit entry that lies at the 136-bit page and 272-bit page boundaries in 136-bit and 272-bit configured quadrants, respectively. The register section of this specification describes the NFA and SSR registers. Adr[13:0] contains the address supplied on the DQ Bus during PIO ac- cess to the M7010R. Command Bits 8 and 7, CMD[8:6] are passed from the command to the SRAM address bus. See COMMAND CODES AND PARAMETERS, page 27 for more informa- tion. SRAM PIO Access SRAM READ. Enables READ access to the off- chip SRAM that contains associative data. The la- tency from the issuance of the READ Instruction to the address appearing on the SRAM bus is the same as the latency of the SEARCH Instruction, and will depend on the value programmed for the TLSZ parameter in the device configuration regis- ter. The latency of the ACK from the READ In- struction is the same as the latency of the SEARCH Instruction to the SRAM address plus the HLAT programmed into the configuration reg- ister. Note: SRAM READ is a blocking operation - no new instruction can begin until the ACK is returned by the selected device performing the access. The following explains the SRAM READ operation in a table with only one device and having the fol- lowing parameters: TLSZ = 00, HLAT = 000, LRAM = 1, and LDEV = 1. Figure 43, page 59 shows the associated timing diagram. For the fol- lowing description, the selected device refers only to the device in the table because it is the only de- vice to be accessed. – Cycle 1A: The host ASIC applies the READ In- struction on CMD[1:0] using CMDV = 1. The DQ Bus supplies the address, with DQ[20:19] set to “10,” to select the SRAM address. The host ASIC selects the device for which the ID[4:0] matches the DQ[25:21] lines. During this cycle, the host ASIC also supplies SADR[21:19] on CMD[8:6]. – Cycle 1B: The host ASIC continues to apply the READ Instruction on CMD[1:0] using CMDV = 1. The DQ Bus supplies the address with DQ[20:19] set to “10” to select the SRAM ad- dress. – Cycle 2: The host ASIC floats DQ[67:0] to a tri- state condition. – Cycle 3: The host ASIC keeps DQ[67:0] in a tri- state condition. – Cycle 4: Theselected devicestarts todrive DQ[67:0] and drives ACK from High-Z to LOW. – Cycle 5: The selected device drives the READ address on SADR[21:0]; it also drives ACK HIGH, CE_L LOW, and ALE_L LOW. – Cycle 6: The selected device drives CE_L HIGH, ALE_L HIGH, the SADR Bus and DQ Bus in a tri-state condition, and ACK LOW. At the end of Cycle 6, the selected device floats ACK in a tri-state condition, and a new command can begin. Table 36, page 62 shows by how many cycles SRAM signals shift to the right for various TLSZ values. Table 37, page 62 shows by how many cycles SRAM signals shift to the right for various HLAT values. |
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