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ADRF5717BCCZN-R7 データシート(PDF) 4 Page - Analog Devices |
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ADRF5717BCCZN-R7 データシート(HTML) 4 Page - Analog Devices |
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4 / 15 page ![]() Data Sheet ADRF5717 SPECIFICATIONS analog.com Rev. 0 | 4 of 15 Table 1. Specifications (Continued) Parameter Symbol Test Conditions/Comments Min Typ Max Unit DIGITAL CONTROL INPUTS LE, D5, and D6 Voltage Low VINL 0 0.8 V High VINH 1.2 3.3 V Current Low IINL −33 µA High IINH <1 µA SUPPLY CURRENT VDD and VSS Positive Supply Current LE, D5, and D6 = 0 V 230 µA LE, D5, and D6 = 3.3 V2 130 µA Negative Supply Current 500 µA RECOMMENDED OPERATING CONDITIONS Supply Voltage Positive VDD 3.15 3.45 V Negative VSS −3.45 −3.15 V Digital Control Voltage 0 VDD V RF Power Handling3 f = 100 MHz to 30 GHz, TCASE = 85°C4 Input at ATTIN or ATTOUT Steady state average 30 dBm Steady state peak 33 dBm Hot switching average 27 dBm Hot switching peak 30 dBm Case Temperature TCASE −40 +105 °C 1 Input linearity performance degrades over frequency, see Figure 16 to Figure 19. 2 If LE, D5, and D6 are in a different combination of states, the positive supply current is between 130 μA and 230 μA. 3 For power derating over frequency, see Figure 3 and Figure 2. Applicable for all ATTIN and ATTOUT power specifications. 4 For 105°C operation, the power handling degrades from the TCASE = 85°C specifications by 3 dB. |
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