STPS30L45CG/CR/CT/CW/CFP

2/8

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

45

V

RMS forward current

30

A

Average forward

current

TO-220FPAB

Tc = 110°C

δ = 0.5

Per diode

Per device

15

30

A

TO-220AB, TO-247,

I

Tc = 135°C

δ = 0.5

Surge non repetitive forward current

tp = 10 ms Sinusoidal

220

A

Repetitive peak reverse current

tp=2µs square F=1kHz

1A

Non repetitive peak reverse current

tp = 100 µs square

3A

Repetitive peak avalanche power

tp = 1µs

Tj = 25°C

6000

W

Storage temperature range

- 65 to + 150

°C

Tj

Maximum operating junction temperature *

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

ABSOLUTE RATINGS (limiting values, per diode)

*:

dPtot

dTj

Rth j

a

<

−

1

()

thermal runaway condition for a diode on its own heatsink

Symbol

Parameter

Value

Unit

Junction to case

TO-220FPAB

Per diode

Total

4

3.2

°C/W

TO-220AB, TO-247,

I

Per diode

Total

1.60

0.85

TO-220FPAB

Coupling

2.5

°C/W

TO-220AB, TO-247,

I

0.10

When the diodes 1 and 2 are used simultaneously :

THERMAL RESISTANCES

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

Reverse leakage

current

Tj = 25°C

0.4

mA

Tj = 125°C

100

200

mA

Forward voltage drop

Tj = 25

0.55

V

Tj = 125°C

0.42

0.50

Tj=25

0.74

Tj = 125°C

0.59

0.67

Pulse test : * tp = 380 µs,

δ <2%

To evaluate the conduction losses use the following equation :

2

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)