STPS30L45CT datasheet(3/8 Pages) STMICROELECTRONICS

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STPS30L45CG/CR/CT/CW/CFP

02468

IF(av) (A)

PF(av)(W)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

100

125

150

Tamb(°C)

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

TO-220FPAB

TO-220AB/TO-247/I²PAK/D²PAK

δ=tp/T

Fig. 2: Average forward current versus ambient

temperature (

δ=0.5, per diode).

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

t(s)

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

Fig. 5-1: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

1E-3

1E-2

1E-1

1E+0

100

120

140

t(s)

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220FPAB only).

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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